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| Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD525 DESCRIPTION With TO-220C package Complement to type 2SB595 High breakdown voltage :VCEO=100V Low collector saturation volage : VCE(sat)=2.0V(Max) APPLICATIONS Power amplifier applications Recommend for 30W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Tc=25ae ) SYMBOL VCBO VCEO VEBO IC IE IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Base current Collectorl power dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE 100 100 5 5 5 0.5 40 150 -55~150 ae ae UNIT V V V A A A W JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown votage Collector-emitter saturation voltage Emitter-base voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA; IB=0 IE=10mA; IC=0 IC=4A;IB=0.4 A IC=1A ; VCE=5V VCB=100V IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=4A ; VCE=5V IC=1A ; VCE=5V IE=0; VCB=10V;f=1MHz 40 20 12 100 MIN 100 5 TYP. SYMBOL VCEO VEBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB 2SD525 MAX UNIT V V 2.0 1.5 100 1 240 |I V V A mA MHz pF hFE-1 classifications R 40-80 O 70-140 Y 120-240 JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SD525 Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) JMnic |
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